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Examples

  • Intel C8185-2 NMOS SRAM for 8085 micro 1K x 8 rare!

    Micro Rare | SciFi, Fantasy & Horror Collectibles 2009

  • If the CdS connects between ground and the internal circuit, you'd use an NMOS switch with ground-based gate control.

    RadioPopper JrX Will Make You Fat and Happy [Full Review] 2009

  • Starting out with a relatively simple Silicon-Germanium epitaxy, we are looking at uniaxial compression and stretching for PMOS and NMOS devices, respectively, to speed up the currents and reduce power consumption at the same time.

    CPUs and heat 2005

  • Thus, FZD physicists and their colleagues demonstrated that in principle it is possible to fabricate germanium-based n-channel transistors (NMOS) with dimensions corresponding to the most advanced technological requirements.

    Nano Tech Wire 2010

  • So far it has not been possible to produce large-scale integrated transistors of a specific type (NMOS) using germanium.

    Nano Tech Wire 2010

  • The H35 specialty foundry technology allows the integration of 3.3 V, 5 V, 20 V, 50 V and 120 V NMOS and PMOS devices on

    NewsBlaze.com Current News - Top Stories 2010

  • H35 offers fully scalable High-Voltage NMOS and PMOS devices, floating logic libraries as well as a best-in-class power-on resistance.

    NewsBlaze.com Current News - Top Stories 2010

  • While these methods allow for the manufacturing of p-channel transistors (PMOS) according to future technology needs (22 nanometer technology node), it was not possible to produce corresponding n-channel transistors (NMOS) using germanium.

    Nano Tech Wire 2010

  • Both versions of Earth MOSFETs, referenced CHT-NMOS8005 and CHT-NMOS8010, exhibit high-temperature performances.

    Electronicstalk - electronics industry news 2010

  • At 225C, CHT-NMOS8005's gate-leakage current remains below 500nA, while its drain-off current is as low as 20uA and its turn-on delay time is 30ns.

    Electronicstalk - electronics industry news 2010

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