from Wiktionary, Creative Commons Attribution/Share-Alike License
- n. Plural form of epilayer.
Sorry, no etymologies found.
At EPFL in Lausanne, Switzerland, AlInN/GaN epilayers are grown in an Aixtron 200/4 RF-S MOCVD system on 2-inch substrates made from c-plane sapphire, silicon, and SiC.
Incidentally, similar AlInN/GaN HEMT epilayers are commercially available from EPFL start-up NovaGaN.
Dislocation densities in the epilayers are governed by the substrate choice, and range from 7 x 108 cm-2 for sapphire to 5 x 109 cm-2 for silicon.
Material uniformity of thick, nearly lattice-matched AlInN epilayers grown on GaN-onsapphire templates can be assessed by energy dispersive X-ray analysis.
For the sake of comparison, AlInN/AlN/GaN HEMTs were fabricated in a similar manner using epilayers grown on high-resistivity silicon (111) substrates.
Photoluminescence is a well-established, non-contact, nondestructive technique used in the development and process control of semiconductors, with room temperature PL wafer maps giving vital information on the uniformity of alloy composition, material quality and defects in substrates, epilayers and device structures.
GaN epilayers grown on large-diameter Si wafers, potentially measuring up to 200mm, offer a lower-cost technology compared to other substrates.