fT

Growth is some function fT,M that takes into account whether the temperature is higher than can be sustained given the available moisture.

Bunn et al. [2005] – 20th century tree growth in the Sierra Nevadas « Climate Audit 2005

Interesting that Dano in #44 is hitting all four cylinders growth = fT,P,C,N – but does not consider the model mis-specification error that I believe all dendroclimatologists make when they neglect the synergy from the 2,3, and 4-term interactions.

Bristlecone dC13 « Climate Audit 2005

Fig. 5.2: Gas yield as a function of temperature and retention time (fT, RT-curves)

10. Appendix 1989

Increasing the drain bias to a VDS of 5 V resulted in a peak fMAX (U) of 200 GHz with an fT of 188 GHz at a VGS of -5.3 V.

Compound Semiconductor 2010

Other research groups have countered surface depletion effects with aluminum-rich AlGaN barriers and various dielectrics, an approach that has yielded impressive cutoff frequencies, with fT values reaching 190 GHz with

Compound Semiconductor 2010

The fT and fMAX remain high for a broad range of drain biases, remaining above 160 GHz up to VDS of 8 V.

Compound Semiconductor 2010

Transistor microwave performance at the peak fT bias of VDS = 4 V and VGS = -5.3 V has been measured (see Figure 7), and extrapolation of the short-circuit current gain | h21 | 2 and of

Compound Semiconductor 2010

Coastal Designs Surf Series e fT aup S ur Surf Aqua fA q ua S ur Surf Taupe with solid tiles (Suede) as a border. n f Ta S ur www.

Recently Uploaded Slideshows VillaLagoonTile 2010

Devices with a 80 nm gate length were fabricated on these layers, which show simultaneous cutoff frequencies, fT of 143 GHz and fMAX (U) of 176 GHz.

Compound Semiconductor 2010

Mason's unilateral gain U with a -20 dB/dec roll-off yields a fT of 205 GHz and fMAX (U) of 191

Compound Semiconductor 2010