high-k

Besides the dimensions of its circuitry, Intel led competitors in 2007 by adopting a technology called high-k metal gate that helps reduce unwanted leakage of electrical current in chips.

Intel to Invest $6 Billion in Plants Don Clark 2010

Rival Advanced Micro Devices Inc. and Globalfoundries — its former manufacturing operations, now a separate company — early Tuesday demonsstrated a microprocessor, code-named Llano, that is their first to use a 32-nanometer production process as well as high-k metal gates.

Intel to Invest $6 Billion in Plants Don Clark 2010

International Business Machines Corp. in January 2007 said it would likely add high-k technology in the first half of 2008.

Intel Pushes Ahead With Tiny Circuitry 2008

This technology in its 45-nanometer process, known as "high-k," helped reduce energy consumption and increased switching speed on chips Intel began selling last year.

Intel Pushes Ahead With Tiny Circuitry 2008

Advanced Micro Devices Inc. has also said its new 45-nanometer production process offers good performance without high-k technology.

Intel Pushes Ahead With Tiny Circuitry 2008

The processors, based on Intel's revolutionary high-k, metal gate transistor formula and manufactured on the company's 45-nanometer nm process, include the Quad-Core Intel Xeon processor 5400 Series and Dual-Core Intel Xeon processor 5200 Series.

February 2008 - Fareastgizmos.com 2008

But Bernie Meyerson, chief technology officer of the computer maker's systems and technology group, said Tuesday that IBM and six partners were able to hit performance goals while holding off use of high-k technology for 32-nanometer chips.

Intel Pushes Ahead With Tiny Circuitry 2008

We have superior performance, superior reliability and density, the density being 2x over 40-nanometer with our gate-last high-k metal gate process.

Taiwan Semiconductor CEO Discusses Q4 2010 - Earnings Call Transcript - Seeking Alpha 2011

The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices.

unknown title 2011

"ASM was the first to introduce hafnium-based high-k dielectrics for transistor gates, and we are now working with key device manufacturing leaders on scaling next-generation high-k metal gate technology," said Glen Wilk, Sr.

Reuters: Press Release 2011