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Examples
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This simplifies designs by allowing the MOSFETs to work with the low-voltage power rails common in handheld devices, eliminating an extra resistor and voltage source for p-channel load switching, and providing longer battery operation between charges in n-channel load switching.
unknown title 2011
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The n-channel Si8802DB offers on-resistance of 54 milliohms at 4.5 V, 60 milliohms at 2.5 V, 68 milliohms at 1.8 V, 86 milliohms at 1.5 V, and 135 milliohms at 1.2 V.
unknown title 2011
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The 8 V n-channel Si8802DB and p-channel Si8805EDB TrenchFET® power MOSFETs in the MICRO FOOT® package occupy up to 36 % less board space than the next smallest chipscale devices, yet offer comparable -- and even lower -- on resistance.
unknown title 2011
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While these methods allow for the manufacturing of p-channel transistors (PMOS) according to future technology needs (22 nanometer technology node), it was not possible to produce corresponding n-channel transistors (NMOS) using germanium.
D Mag - News 2010
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With its ultra-small outline and height, the Si8800EDB is 36 % smaller and 11 % thinner than the next smallest n-channel device in a chipscale package, allowing for the creation of more compact end products with increased functionality.
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While these methods allow for the manufacturing of p-channel transistors (PMOS) according to future technology needs (22 nanometer technology node), it was not possible to produce corresponding n-channel transistors (NMOS) using germanium.
Nano Tech Wire 2010
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Thus, FZD physicists and their colleagues demonstrated that in principle it is possible to fabricate germanium-based n-channel transistors (NMOS) with dimensions corresponding to the most advanced technological requirements.
Nano Tech Wire 2010
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While these methods allow for the manufacturing of p-channel transistors (PMOS) according to future technology needs (22 nanometer technology node), it was not possible to produce corresponding n-channel transistors (NMOS) using germanium.
D Mag - News 2010
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With its ultra-small outline and height, the Si8800EDB is 36 % smaller and 11 % thinner than the next smallest n-channel device in a chipscale package, allowing for the creation of more compact end products with increased functionality.
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Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm sq. outline.
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