trigate

W / 2 100ns 0,6 0,4 10ns 0,2 0,0 2007 6 8 10 12 14 16 18 Curvature radius R [nm] ΔVT balance from the quantity of injected charge and the area coverage over the fin Hemispherical devices behave better than trigate devices E. Nowak et al. - 23rd IEEE NVSMW / 3rd ICMTD '08 18

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Our approach BOX Physics-based modeling of FN write / erase for trigate FinFLASH with Si-NCs E. Nowak et al. - 23rd IEEE NVSMW / 3rd ICMTD '08 4

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Slide 20: Conclusion  On the model Quantitatively fitting dynamics under FN operation for  3D nanocrystal flash memories employing high-k dielectrics Approach suitable for compact modeling  Perspectives:   Easily extended to various 3D memory device architectures (3G, ΩG, GAA) 2007  Can be extended to SONOS FinFet devices  On corner rounding Appears to be a critical design parameter  Hemispherical devices show a higher ΔVT than  trigate devices E. Nowak et al. - 23rd IEEE NVSMW / 3rd ICMTD '08 20

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