from The American Heritage® Dictionary of the English Language, 4th Edition

  • n. A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.

from Wiktionary, Creative Commons Attribution/Share-Alike License

  • n. A substance added in small amounts to a pure semiconductor material to alter its conductive properties.

from the GNU version of the Collaborative International Dictionary of English

  • n. a foreign substance added to a material to alter its properties; -- a process used. e.g., in making semiconductors from pure silicon in the manufacture of semiconductor chips and integrated circuits.


dop(e) + -ant.
(American Heritage® Dictionary of the English Language, Fourth Edition)


  • Silicon crystals are drawn as a boule from molten silicon (requiring large amounts of energy and time), are sawn into wafers into which dopant diffusions are implanted (again in furnaces requiring energy and time).

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  • Another possible gene dopant: the ACE (for angiotensin converting enzyme) gene.

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  • D'ailleurs beaucoup de sportif l'utilise comme dopant et on s'en sert aussi pour soigner les addiction a la cocaïne ...

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  • Since we had found previously that by adding bromine to the golden (SN) x material, we could increase its conductivity tenfold, we thought that perhaps the impurity in the polyacetylene was acting as a dopant and was actually increasing the conductivity of the polyacetylene, rather than decreasing it.

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  • As a result, we found that the emergence of electrical conductivity on the doped polyacetylene was due to the creation of carbocations or positively charged solitons associated with withdrawing of p electrons from polyacetylene by the dopant when iodine was used as an acceptor dopant.

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  • · The strength of the field depends on the amount of dopant in the silicon.

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  • The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.

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  • Dr Colinge's design-which, like Intel's Tri-Gate, clamps a 3D gate around a single, ultra-thin silicon wire-avoids this by building the entire device from a single type of semiconductor, with much higher dopant concentrations than a conventional flat transistor.

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  • The Georgia Tech process is believed to be the first to provide both electron and hole doping from a single dopant material.

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  • A theme of particular interest to the future of working with silicon is silicon single-dopant and electron spin technology, for which six academics will present cutting-edge nanotechnologies for working with dopants (impurities) in silicon.

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