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Examples
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For designers, the device's lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions.
unknown title 2011
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STMicroelectronics has introduced a new series of 30V surface-mount power transistors, achieving on-resistance as low as 2 milliohms max to increase the energy efficiency of products such as computers, telecom and networking equipment.
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The devices released today feature low on-resistance at 1.5 V with the added benefit of on-resistance specified with a gate drive of only 1.2 V.
unknown title 2011
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The MOSFET's 4.5 V on-resistance rating allows a wide range of PWM and gate driver ICs to be considered in isolated DC/DC power supply designs for telecom brick and bus converter applications.
unknown title 2011
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VSH - News today introduced the industry's first p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance ratings down to 1.2 V in this package size.
unknown title 2011
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The lower on-resistance of the Si8802DB and Si8805EDB minimize voltage drops across the load switch to prevent unwanted under-voltage lockout.
unknown title 2011
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Protection capabilities of the AP2337 include: fast short-circuit response time of 5µs, preventing system shutdown and restart, built-in output-discharge functionality, low on-resistance of 110mΩ over 1A continuous load, reverse-current blocking and output over-voltage protection.
unknown title 2011
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With its industry-low 208 milliohms-nC on-resistance times gate charge at 4.5 V -- a key figure of merit FOM for MOSFETs in DC/DC converter applications -- the SiR870DP combines low conduction and switching losses for higher frequency and switching applications.
unknown title 2011
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Device on-resistance is also low at 250mΩ, helping to minimize circuit voltage drop.
unknown title 2011
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Utilizing Vishay's new ThunderFET® technology, the 100 V SiR870DP offers an industry-low on-resistance of 7.8 milliohms at 4.5 V, in addition to a very low on-resistance of 6 milliohms at 10 V.
unknown title 2011
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